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MJE5850, MJE5851, MJE5852
MJE5851 and MJE5852 are Preferred Devices
SWITCHMODEt Series PNP Silicon Power Transistors
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications.
Features
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* * * * * * * *
*
Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits Fast Turn-Off Times 100 ns Inductive Fall Time @ 25_C (Typ) 125 ns Inductive Crossover Time @ 25C (Typ) Operating Temperature Range -65 to +150_C 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents Pb-Free Packages are Available*
8 AMPERE PCP SILICON POWER TRANSISTORS 300-350-400 VOLTS 80 WATTS
MARKING DIAGRAM
MJE585xG AY WW 1 2 TO-220AB CASE 221A-09 STYLE 1
3
MJE585x G A Y WW
= Device Code x = 0, 1, or 2 = Pb-Free Package = Assembly Location = Year = Work Week
ORDERING INFORMATION
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
1
February, 2006 - Rev. 4
Publication Order Number: MJE5850/D
MJE5850, MJE5851, MJE5852
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIII I II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIII I IIIIIIIIIIIIIIIIIIIII IIII I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS
Rating Symbol MJE5850 300 350 MJE5851 350 400 6.0 MJE5852 400 450 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Base Current VCEO(sus) VCEV VEB IC ICM IB IBM PD - Continuous - Peak (Note 1) - Continuous - Peak (Note 1) 8.0 16 4.0 8.0 Total Power Dissipation @ TC = 25_C Derate above 25_C 80 0.640 W W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to 150
THERMAL CHARACTERISTICS
Rating
Symbol RqJC TL
Max
Unit
Thermal Resistance, Junction-to-Case
1.25 275
_C/W _C
Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
ORDERING INFORMATION
Device MJE5850 MJE5850G MJE5851 MJE5851G MJE5852 MJE5852G Package TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) 50 Units / Rail Shipping
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II II I III I I I II I I I IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIII I IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I IIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIII IIIIIIIIIIIIIII I II I I IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I III I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII II I IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I II I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I I I II I I I II IIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII
2. Pulse Test: PW = 300 ms. Duty Cycle v 2% SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 2) SECOND BREAKDOWN OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Fall Time
Crossover Time
Storage Time
Fall Time
Crossover Time
Storage Time
Inductive Load, Clamped (Table 1)
Fall Time
Storage Time
Rise Time
Delay Time
Resistive Load (Table 1)
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Base-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 1.0 Adc) (IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)
Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 1.0 Adc) (IC = 8.0 Adc, IB = 3.0 Adc) (IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)
DC Current Gain (IC = 2.0 Adc, VCE = 5 Vdc) (IC = 5.0 Adc, VCE = 5 Vdc)
Clamped Inductive SOA with base reverse biased
Second Breakdown Collector Current with base forward biased
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)
Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 W, TC = 100_C)
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
Collector-Emitter Sustaining Voltage (IC = 10 mA, IB = 0)
(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, VBE(off) = 5 Vdc, tp = 50 ms, Duty Cycle v 2%)
(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, tp = 50 ms, Duty Cycle v 2%)
(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 25_C)
(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 100_C)
Characteristic
MJE5850, MJE5851, MJE5852
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MJE5850 MJE5851 MJE5852 VCEO(sus) Symbol RBSOA VCE(sat) VBE(sat) IEBO ICER ICEV Cob hFE IS/b tsv tsv td tfi tc tfi tc ts tr tf Min 300 350 400 15 5 - - - - - - - - - - - - - - - - - - - - 0.125 0.100 0.025 0.60 0.11 Typ 270 See Figure 13 See Figure 12 0.1 0.5 0.1 0.4 0.8 - - - - - - - - - - - - - Max 1.5 3.0 0.5 2.0 0.5 0.1 1.5 1.5 2.0 5.0 2.5 1.0 3.0 0.5 2.5 - - - - - - - - - mAdc mAdc mAdc Unit Vdc Vdc Vdc pF ms ms ms ms ms ms ms ms ms ms -
3
MJE5850, MJE5851, MJE5852
TYPICAL ELECTRICAL CHARACTERISTICS
200 100 hFE , DC CURRENT GAIN 70 50 30 20 VCE = 5 V 10 7.0 5.0 3.0 2.0 0.1 TJ = 150C TJ = 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 1.6 IC = 0.25 A 1.2 1.0 A 2.5 A 5.0 A
0.8
TJ = 25C
0.4 0 0.01
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMPS)
5.0 7.0
10
0.02
0.05
0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (AMPS)
5.0
10
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
2.0 1.6 IC/IB = 4 V, VOLTAGE (VOLTS)
1.6
IC/IB = 4
1.2
1.2
0.8
TJ = 150C
0.8
TJ = 25C
0.4 0 0.1 TJ = 25C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
0.4 0 0.1
TJ = 150C
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Voltage
105 IC, COLLECTOR CURRENT (nA) 104 TJ = 150C 103 100C 102 101 100 REVERSE 25C +0.2 +0.1 -0.1 -0.2 -0.3 -0.4 0 VBE, BASE-EMITTER VOLTAGE (VOLTS) -0.5 FORWARD VCE = 200 V
3000 2000 TJ = 25C C, CAPACITANCE (pF) 1000 500 Cob 200 100 50 30 0.1 0.2 0.5 1.0 5.0 10 20 50 100 200 500 1000 VR, REVERSE VOLTAGE (VOLTS) Cib
Figure 5. Collector Cutoff Region
Figure 6. Capacitance
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MJE5850, MJE5851, MJE5852
Table 1. Test Conditions for Dynamic Performance
VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING
+V 0.0025 mF 0.2 mF 500 W 1/2 W 500 W 1/2 W
50 mF +-
-10 V 20
1
0.1 mF MJE15029 1N4934
IB1
TURN-ON TIME 1 2
INPUT CONDITIONS
0
0.1 mF
2
INPUT +V 0 50 W 2W 500 W 1/2 W 0.2 mF
0.0033 mF 500 W 1/2 W 1W2 MJE15028W 0.1 mF - + 1 2
PW Varied to Attain IC = 100 mA
IB1 adjusted to obtain the forced hFE desired TURN-OFF TIME Use inductive switching driver as the input to the resistive test circuit.
-V adjusted to obtain desired IB1 + V adjusted to obtain desired VBE(off)
CIRCUIT VALUES
Lcoil = 180 mH Rcoil = 0.05 W VCC = 20 V
50 mF -V
VCC = 250 V RL = 62 W Pulse Width = 10 ms RESISTIVE TEST CIRCUIT t1 Adjusted to Obtain IC
Lcoil = 80 mH, VCC = 10 V Rcoil = 0.7 W
Vclamp = 250 V RB adjusted to attain desired IB1
INDUCTIVE TEST CIRCUIT
OUTPUT WAVEFORMS IC
TEST CIRCUITS
1
TUT 1N4937 OR EQUIVALENT Vclamp RS = 0.1 W
Rcoil Lcoil VCC VCE
ICM t1 tf
INPUT SEE ABOVE FOR DETAILED CONDITIONS
tf Clamped t
t1 t2
Lcoil (ICM) VCC Lcoil (ICM) VClamp 1 2
TUT RL VCC
VCEM TIM E t2
Vclamp t
Test Equipment Scope -- Tektronix 475 or Equivalent
1.0 tc 100C t c , CROSSOVER TIME (s) 0.8 0.6 tsv 100C tsv 25C IC = 4 A IC/IB = 4 TJ = 25C
3.0 2.7 t sv, VOLTAGE STORAGE TIME ( s) 2.4 2.1 1.8 1.5
IB VCE IC
10% 90% IB1 VCEM tsr trv
tc tfi
10% 2% ICM ICM tti
0.4
1.2 0.9
90% ICM ICM TIME VCEM
0.2 0
tc 25C
0.6 0.3
Vclamp 0 1 2 3 4 5 6 7 8
0
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 7. Inductive Switching Measurements
Figure 8. Inductive Switching Times
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MJE5850, MJE5851, MJE5852
SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10-90% VCEM tfi = Current Fall Time, 90-10% ICM tti = Current Tail, 10-2% ICM tc = Crossover Time,10% VCEM to 10% ICM An enlarged portion of the inductive switching waveform is shown in Figure 7 to aid on the visual identity of these terms.
1.0 0.7 0.5 0.3 t, TIME ( s) 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 0.7 1.0 2.0 td tf 3.0 5.0 7.0 10 0.1 0.1 0.3 0.5 0.7 1.0 2.0 4.0 7.0 10 IC, COLLECTOR CURRENT (AMPS) tr
For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222A: PSWT = 1/2 VCCIC(tc)f In general, t rv + t fi ] t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (t c and tsv) which are guaranteed at 100_C.
10 VCC = 250 V IC/IB = 4 TJ = 25C t, TIME ( s) 0.7 ts 0.4 0.3 0.2 VCC = 250 V IC/IB = 4 VBE(off) = 5 V TJ = 25C
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Turn-On Switching Times
Figure 10. Turn-Off Switching Time
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1 0.7 0.5 0.3 0.2 0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 20 50 ZqJC(t) = r(t) RqJC RqJC = 1.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) P(pk)
0.07 0.05 0.03 0.02 0.01 0.01
t1
t2
DUTY CYCLE, D = t1/t2 100 200 500 1k
Figure 11. Typical Thermal Response [ZqJC(t)]
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MJE5850, MJE5851, MJE5852
The Safe Operating Area figures shown in Figures 12 and 13 are specified for these devices under the test conditions shown. 20 IC, COLLECTOR CURRENT (AMPS) 10 5.0 5 ms 2.0 1.0 0.5 0.2 0.1 0.05 0.02 BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMITMJE5850 MJE5851 MJE5852 200 300 400 500 7.0 10 20 40 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TC = 25C dc 100 ms 1 ms
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
Figure 12. Maximum Forward Bias Safe Operating Area
8.0 IC, COLLECTOR CURRENT (AMPS) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 100 200 300 400 500 MJE5850 MJE5851 MJE5852 IC/IB = 4 VBE(off) = 2 V to 8 V TJ = 100C
There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 15. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. RBSOA, Maximum Reverse Bias Safe Operating Area
3.5 3.0 IB2(pk) (AMPS) IC = 4 A IB1 = 1 A TJ = 25C
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives the RBSOA characteristics.
1 0.8 0.6 THERMAL DERATING SECOND BREAKDOWN DERATING
2.5
2.0
POWER DERATING FACTOR 4 6 8
0.4
1.5 1.0
0.2 0
0
2
20
40
60
80
100
120
140
160
VBE(off), BASE-EMITTER VOLTAGE (VOLTS)
TC, CASE TEMPERATURE (C)
Figure 14. Peak Reverse Base Current
Figure 15. Forward Bias Power Derating
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MJE5850, MJE5851, MJE5852
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE AA
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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